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An HSPICE HBT model for InP-based single HBTs

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5 Author(s)
K. Yang ; Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA ; A. L. Gutierrez-Aitken ; X. Zhang ; P. Bhattacharya
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An HBT model for InP-based single HBTs (SHBTs) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBTs, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach. Excellent agreement has been achieved between the experimental and calculated results based on the model

Published in:

IEEE Transactions on Electron Devices  (Volume:43 ,  Issue: 9 )