Cart (Loading....) | Create Account
Close category search window
 

Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jacunski, M.D. ; Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA ; Shur, M.S. ; Hack, Michael

Based on experimental and theoretical studies of n- and p-channel polysilicon thin film transistors with gate W/L ratios from 0.3 to 3.3, we have demonstrated that the threshold voltage extracted from gate to channel capacitance data results in field effect mobility parameters which are independent of device geometry. The parameters extracted using this Vt allow us to reproduce the I-V characteristics of the n- and p channel TFTs over wide ranges of bias voltages and gate sizes. The Cgc-VGS characteristics of polysilicon TFTs are strongly affected by the trapping and de-trapping of carriers. As a result, the measured Cgc characteristic is a function of measurement frequency and gate length. However, we demonstrate that to the first order, the frequency dispersion of the Cgc curve can be related to the effective carrier transit time determined using the VGS dependent field effect mobility

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 9 )

Date of Publication:

Sep 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.