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High-pressure techniques are used to investigate and optimise the design of GaInAsSb/AlGaAsSb vertical cavity surface emitting lasers (VCSELs) emitting at 2.4 ??m. From measurements on edge emitting lasers it is found that non-radiative Auger recombination accounts for up to 85% of the threshold current at room temperature (RT) and is responsible for their strong temperature sensitivity. The effect of Auger recombination in VCSELs may be mitigated through judicious design of the gain peak-cavity mode (CM) alignment which may be investigated using high pressure. Results show that temperature insensitivity over the range -10 to +30??C may be obtained around RT if the gain peak is offset by approximately 10 meV higher in energy from the VCSEL CM.