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Resistive Switching Properties of \hbox {Au}/ \hbox {ZrO}_{2}/\hbox {Ag} Structure for Low-Voltage Nonvolatile Memory Applications

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10 Author(s)
Yingtao Li ; Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China ; Long, Shibing ; Manhong Zhang ; Liu, Qi
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The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 2 )