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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:31 Issue:2 Help

Resistive Switching Properties of \hbox {Au}/ \hbox {ZrO}_{2}/\hbox {Ag} Structure for Low-Voltage Nonvolatile Memory Applications

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10 Author(s)
Yingtao Li ; Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China ; Long, Shibing ; Manhong Zhang ; Liu, Qi
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The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

Published in:
Electron Device Letters, IEEE  (Volume:31 ,  Issue: 2 )

Date of Publication: Feb. 2010

Page(s):
117 - 119
ISSN :
0741-3106
INSPEC Accession Number:
11088161
Digital Object Identifier :
10.1109/LED.2009.2036276
Product Type:
Journals & Magazines
Date of Publication :
11 December 2009
Date of Current Version :
26 January 2010
Issue Date :
Feb. 2010
Sponsored by :
IEEE Electron Devices Society

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