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GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone

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7 Author(s)
T. M. Roh ; Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea ; Y. Suh ; B. Kim ; W. Park
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An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5×2.9 mm2 ) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25%, adjacent channel leakage power of -29 dBc at 885 kHz, and -48 dBc at 1980 kHz were obtained with an output power of 27.25 dBm and Vdd=4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications

Published in:

Electronics Letters  (Volume:32 ,  Issue: 20 )