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Noninvasive metal contacts in chemically derived graphene devices

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5 Author(s)
Sundaram, Ravi S. ; Max Planck Institut fuer Festkoerperforschung, Heisenbergstrasse 1, Stuttgart 70569, Germany ; Gomez-Navarro, Cristina ; Lee, Eduardo J.H. ; Burghard, Marko
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We study the properties of gold contacts on chemically derived graphene devices by scanning photocurrent microscopy and gate-dependent electrical transport measurements. In the as-fabricated devices, negligible potential barriers are found at the gold/graphene interface, reflecting the noninvasive character of the contacts. Device annealing above 300 °C leads to the formation of potential barriers at the contacts concomitant with metal-induced p-type doping of the sheet as a consequence of the diffusion of gold from the electrodes. The transfer characteristics of the chemically derived graphene devices point toward the suppression of Klein tunneling in this material.

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Applied Physics Letters  (Volume:95 ,  Issue: 22 )