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Simultaneous and independent semiconductor laser operation at 1.3 and 1.55 μm produced by focused ion beam etching

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4 Author(s)
C. K. Gardiner ; Dept. of Eng., Cambridge Univ., UK ; D. A. Kozlowski ; J. M. C. England ; R. G. S. Plumb

The authors show that, by introducing a single focused ion beam etched cavity into the 1.3 μm bandgap material between the phase tuning and sampled grating sections of a three section DBR laser, sufficient feedback is produced to enable stimulated emission at 1.3, as well as 1.55 μm. The etched cavity also increases the inter-contact resistance

Published in:

Electronics Letters  (Volume:32 ,  Issue: 20 )