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1.8 GHz class E power amplifier for wireless communications

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4 Author(s)
T. Sowlati ; Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada ; Y. Greshishchev ; C. Andre ; T. Salama

The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V

Published in:

Electronics Letters  (Volume:32 ,  Issue: 20 )