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Abnormal base current in post-burn-in AlGaAs/GaAs heterojunction bipolar transistors

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4 Author(s)
Sheu, S. ; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA ; Liou, J.J. ; Huang, C.I. ; Williamson, D.C.

The base current of AlGaAs/GaAs hetero-junction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 to 2, in the mid-voltage range. This paper develops an analytical model to investigate the physical mechanisms underlying such a characteristic. Our model calculations show that the recombination current in the base has an ideality factor of about 3 in the mid-voltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model

Published in:

Southcon/96. Conference Record

Date of Conference:

25-27 Jun 1996

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