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On the reverse short-channel effects of submicron MOSFETs

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7 Author(s)
Narayanan, R. ; Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA ; Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J.
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A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value

Published in:

Southcon/96. Conference Record

Date of Conference:

25-27 Jun 1996