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Experimental Demonstration of Deeply-Etched SiO _{2} Ridge Optical Waveguides and Devices

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6 Author(s)
Zhen Sheng ; State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China ; Bo Yang ; Liu Yang ; Jing Hu
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Deeply-etched SiO2 optical ridge waveguides are fabricated and characterized. A detailed discussion of the fabrication process (especially for the deep etching process) is presented. The measured propagation losses for the fabricated waveguides with different core widths range from 0.33 ~ 0.81 dB/mm. The loss is mainly caused by the scattering due to the sidewall roughness. The losses in bending sections are also characterized, which show the possibility of realizing a small bending radius (several tens of microns). 1 × N (N = 2, 4, 8) multimode interference couplers based on the deeply-etched SiO2 ridge waveguide are also fabricated and show fairly good performances.

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Quantum Electronics, IEEE Journal of  (Volume:46 ,  Issue: 1 )