Referenced Items are not available for this document.
This brief models the junction discontinuities of a rear Al-doped p+ emitter (np+) formed by screen printing and firing. Theoretical fitting of the suns-V oc data to the circuit model shows that not only do the junction discontinuities deteriorate cell V oc, for the case of p-type cells, but they also reduce cell fill factor on n-type cells through increased junction recombination and nonlinear shunts.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
2
)
Date of Publication: Feb. 2010
- Page(s):
- 525 - 529
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11071286
- Digital Object Identifier :
- 10.1109/TED.2009.2037174
- Product Type:
- Journals & Magazines
- Date of Publication :
- 08 December 2009
- Date of Current Version :
- 19 January 2010
- Issue Date :
- Feb. 2010
- Sponsored by :
- IEEE Electron Devices Society
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