Referenced Items are not available for this document.
This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
1
)
Date of Publication: Jan. 2010
- Page(s):
- 222 - 227
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11024602
- Digital Object Identifier :
- 10.1109/TED.2009.2035194
- Product Type:
- Journals & Magazines
- Date of Publication :
- 08 December 2009
- Date of Current Version :
- 22 December 2009
- Issue Date :
- Jan. 2010
- Sponsored by :
- IEEE Electron Devices Society
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