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Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit

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4 Author(s)
Kunhee Cho ; Dept. of Electr. & Electron. Eng. ing, Yonsei Univ., Seoul, South Korea ; Dongmyung Lee ; Jeonghwan Lee ; Gunhee Han

This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.

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Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 1 )