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Bias stress and condensation of mobile trap agents in printed organic transistors

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3 Author(s)
Hiraoka, Maki ; Photonics Research Institute (PRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan ; Yamada, T. ; Hasegawa, Tatsuo

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We report the relationship between the device instability and the presence of hydrophilic/hydrophobic boundary that is conventionally utilized to obtain well-defined film patterning in printed electronics devices. Pentacene thin-film transistors composed of inkjet-printed synthetic-metal electrodes exhibit notable bias stress effects whose appearance and disappearance depend critically on the positioning of the hydrophilic/hydrophobic boundary within the channel. The Kelvin probe force microscopy measurements revealed that the bias-stress effect is originated in the temporal evolution of trapped charge densities accumulated at the hydrophilic/hydrophobic boundary, in which the mobile nature of trap agents on the hydrophilic surface take crucial role.

Published in:
Applied Physics Letters  (Volume:95 ,  Issue: 22 )

Date of Publication: Nov 2009

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