Nanoimprint lithography (NIL) is regarded as the lithographic technology of the next generation. The photolithography is advancing to perform resolution of 32 nm. Although photolithography and high-voltage-acceleration (≫50 kV) electron-beam-lithography (EBL) techniques are currently used in commercialized lithography, these two methods involve high costs. The authors therefore attempted to fabricate arrays of dots, each with a diameter of 20 nm or less, by using low-voltage-acceleration EBL. NIMO-P0701 was used as a positive-type inorganic EB resist in this study and a combination of NIMO-P0701 and low-acceleration-voltage EBL was established. Attempts were then made to use a postexposure bake (PEB) to further reduce the size of the dot array patterns. Finally, the developed dot array mold was transferred by UV-NIL without dry etching. As a result, arrays of dots with a diameter of 20 or 10 nm were fabricated by EBL at an acceleration voltage of 4 kV and subsequent PEB. The resulting mold was developed with buffered hydrofluoric acid. The developed NIMO-P0701 pattern was used for NIL, and pattern transfer to a UV-curable resin was successfully achieved. In this case, the optimum transfer pressure was 4 MPa. Additionally, dot arrays initially produced with diameters of 30 and 18 nm were shrunk to sizes of 20 and 10 nm, respectively, by means of PEB.