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Electronic properties of Ge dangling bond centers at Si1-xGex/SiO2 interfaces

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6 Author(s)
Afanasev, V.V. ; Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium ; Houssa, M. ; Stesmans, A. ; Souriau, L.
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Comparison between densities of paramagnetic Ge dangling bond defects and shallow acceptor traps at interfaces of the condensation-grown Si1-xGex layers (0.28≤x≤0.93) with thermal SiO2 as a function of Ge fraction, x, reveals quantitative agreement. Moreover, defect densities detected in both magnetic resonance and electrical experiments exhibit reversible passivation-depassivation behavior with respect to hydrogen indicating observation of the same defect (GePb1 center). The corresponding energy level is estimated to lie at 0.35±0.10 eV above the valence band in bulk Si, which makes these defects behave as shallow acceptors in Ge-rich Si1-xGex.

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Applied Physics Letters  (Volume:95 ,  Issue: 22 )