Referenced Items are not available for this document.
A fully integrated 5-6-GHz class-F power amplifier in 180-nm CMOS, optimised for low supply voltages (V dd), is presented. At a V dd of 1.5 V, a power added efficiency (PAE) up to 42.7 and a 1 dB compression point (P1 dB) of 16.2 dBm are measured. At 1.9 V V dd, a P1 dB of 18.4 dBm, a PAE of 42.8 , and a gain of 8.8 dB are achieved.
Published in:
Electronics Letters
(Volume:45
,
Issue:
24
)
Date of Publication: November 19 2009
- Page(s):
- 1240 - 1241
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 10995599
- Digital Object Identifier :
- 10.1049/el.2009.1252
- Date of Current Version :
- 08 December 2009
- Issue Date :
- November 19 2009
- Sponsored by :
- Institution of Engineering and Technology
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