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A fully integrated 5-6-GHz class-F power amplifier in 180-nm CMOS, optimised for low supply voltages (V dd), is presented. At a V dd of 1.5 V, a power added efficiency (PAE) up to 42.7 and a 1 dB compression point (P1 dB) of 16.2 dBm are measured. At 1.9 V V dd, a P1 dB of 18.4 dBm, a PAE of 42.8 , and a gain of 8.8 dB are achieved.
Date of Publication: November 19 2009