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High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration

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3 Author(s)
Vitale, S.A. ; Lincoln Laboratory, MIT, 244 Wood Street, Lexington, Massachusetts 02420 ; Kedzierski, J. ; Keast, C.L.

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Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions used in this work, the TiN etch rate appears to be ion flux limited and exhibits a low ion enhanced etching activation energy of 0.033 eV. Notching of the polysilicon layer above the TiN may occur during the polysilicon overetch step as well as the TiN overetch step. Notching is not significantly affected by charging of the underlying gate dielectric under the conditions used. By optimizing the plasma etch process conditions, TiN:SiO2 selectivity of nearly 1000:1 is achieved, and a two-step TiN main etch and TiN overetch process yields well-defined metal gate structures without severe gate profile artifacts.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )