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This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.