Cart (Loading....) | Create Account
Close category search window

Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding Structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jin-Wei Shi ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Kuo, F.-M. ; Wu, C.-J. ; Chang, C.L.
more authors

In this study, we demonstrate near-ballistic uni-traveling carrier photodiodes (NBUTC-PDs) with an optimized flip-chip bonding structure, wide 3-dB optical-to-electrical (O-E) bandwidth (> 110 GHz), and extremely high saturation current-bandwidth product performance (37 mA, > 110 GHz, > 4070 mAmiddot GHz). NBUTC-PDs with different active areas (28-144 mum2) are fabricated and flip-chip bonded with coplanar waveguides onto an AlN-based pedestal. The overshoot drift velocity of the electrons in the collector layer of the NBUTC-PD means that both the thicknesses of the collector layer and active areas of our device can be increased to reduce the density of the output photocurrent, compared to that of the traditional UTC-PD. This improves the high power performance without seriously sacrificing the speed performance. According to the measured O-E frequency responses, devices with even a large active area (144 mum2 ) can still have a flat O-E frequency response, from near dc to 110 GHz. A three-port equivalent circuit model for accurately extracting the 3-dB bandwidth of the devices is established. The extracted 3-dB O-E bandwidth of a device with a small active area (28 mum2) can be as high as 280 GHz under a load of 25 Omega . In addition, the saturation current measurement results indicate that after inserting a center bonding pad on the pedestal (located below the p-metal of the NBUTC-PD for good heat sinking), the saturation current performance of the device becomes much higher than that of the control device (without the center bonding pad), especially for the device with a small active area (28 mum2 ). The measurement and modeling results indicate that a device with a 144 mum2 active area and optimized flip-chip bonding pedestal can achieve an extremely high saturation current-bandwidth product (6660 mA-GHz, 37 mA, 180 GHz).

Published in:

Quantum Electronics, IEEE Journal of  (Volume:46 ,  Issue: 1 )

Date of Publication:

Jan. 2010

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.