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Solution-processed conjugated polymer organic p-i-n light-emitting diodes with high built-in potential by solution- and solid-state doping

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7 Author(s)
Sivaramakrishnan, Sankaran ; Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore S117542, Singapore ; Zhou, Mi ; Kumar, Aravind C. ; Chen, Zhi-Li
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Polymer p-i-n homojunction light-emitting diodes (LEDs) comprising p-doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and n-doped F8BT electron-injection layers have been demonstrated. A thin F8BT film was photocrosslinked and bulk p-doped by nitronium oxidation, then overcoated with an F8BT layer which was then surface n-doped by contact printing with naphthalenide on an elastomeric stamp. These LEDs exhibit high built-in potential (Vbi=2.2 V), efficient bipolar injection, and greatly improved external electroluminescence efficiency compared to control devices without the p-i-n structure. A modulated photocurrent technique was used to measure this Vbi, which systematically improves with diode structure.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 21 )