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Spintronic Memristor Temperature Sensor

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4 Author(s)
Xiaobin Wang ; Seagate Technol., Bloomington, MN, USA ; Yiran Chen ; Ying Gu ; Hai Li

Thermal fluctuation effects on the electric behavior of a spintronic memristor based upon the spin-torque-induced domain-wall motion are explored. Depending upon material, geometry, and electric excitation strength, the device electric behavior can be either sensitive or insensitive to temperature change. We present temperature sensor designs that operate at a temperature sensitive region. The sensitivity is achieved through a combination of the temperature-dependent domain-wall mobility and the positive feedback between memristor resistance and driving strength.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 1 )