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A Single-Chip Dual-Band 22–29-GHz/77–81-GHz BiCMOS Transceiver for Automotive Radars

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4 Author(s)
Jain, V. ; Univ. of California at Irvine, Irvine, CA, USA ; Tzeng, F. ; Lei Zhou ; Heydari, P.

Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22-29-GHz and 77-81-GHz short-range automotive radar bands is designed and implemented in 0.18-¿ m SiGe BiCMOS technology with fT/fmax of 200/180 GHz. The transceiver chip includes a dual-band low noise amplifier, a shared downconversion chain, dual-band pulse formers, power amplifiers, a dual-band frequency synthesizer and a high-speed highly-programmable baseband pulse generator. The transceiver achieves 35/31-dB receive gain, 4.5/8-dB double side-band noise figure, >60/30-dB cross-band isolation, -114/-100.4-dBc/Hz phase noise at 1-MHz offset, and 14.5/10.5-dBm transmit power in the 24/79-GHz bands. Radar functionality is also demonstrated using a loopback measurement. The 3.9 × 1.9-mm2 24/79-GHz transceiver chip consumes 0.51/0.615 W.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 12 )