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Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates

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2 Author(s)
Cannon, E.H. ; Boeing Co., Seattle, WA, USA ; Cabanas-Holmen, M.

We measure heavy ion and proton-induced SETs in inverters, and NAND and NOR gates from a 90 nm RHBD library. NAND and NOR gates have higher SET cross section and generate wider pulses than inverters.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 6 )