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The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs

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4 Author(s)
Moran, J.T. ; RD-CXT, Defense Threat Reduction Agency, Kirtland AFB, NM, USA ; McClory, J.W. ; Petrosky, J.C. ; Farlow, G.C.

Al0.27Ga0.73N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 6 )