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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

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20 Author(s)
Pellish, J.A. ; Flight Data Syst. & Radiat. Effects branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA ; Reed, R.A. ; McMorrow, D. ; Vizkelethy, G.
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Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce¿le¿rateur National d'Ions Lourds, Caen, France, and the University of Jyva¿skyla¿, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 6 )