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Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

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15 Author(s)
Gadlage, M.J. ; Vanderbilt Univ., Nashville, TN, USA ; Ahlbin, J.R. ; Ramachandran, V. ; Gouker, P.
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Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 6 )

Date of Publication:

Dec. 2009

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