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Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process

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7 Author(s)
O. A. Amusan ; Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA ; M. C. Casey ; B. L. Bhuva ; D. McMorrow
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Charge-collection circuits were designed and fabricated in a 90 nm bulk CMOS process to examine the effects of charge sharing in sub-100 nm bulk CMOS processes. Laser interrogation of the charge-collection circuits provide the first direct verification of sub-100 nm charge sharing effects and show the nodal spacing dependence of charge sharing. 3-D TCAD simulations corroborate the laser data and also show the use of guard-diodes as an effective charge sharing mitigation technique.

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IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 6 )