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Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS

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2 Author(s)
Tuinenga, P.W. ; Inst. for Space & Defense Electron., Nashville, TN, USA ; Massengill, L.W.

Propagation characteristics of SET pulses are modeled using circuit simulation by including parasitic elements from the process. Recently observed SET signatures in SOI and bulk CMOS are explained in terms of layout considerations.

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Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 6 )