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Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

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5 Author(s)
Timothy R. Oldham ; Perot Syst. Gov. Services, Inc., Greenbelt, MD, USA ; M. Friendlich ; M. A. Carts ; C. M. Seidleck
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We have compared the endurance of irradiated commercial NAND flash memories with that of unirradiated controls. Radiation exposure has little or no effect on the endurance of flash memories. Results are discussed in light of the relevant models for electron and hole trapping.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 6 )