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We present results of laser-induced analog SETs at elevated temperatures. We found increasing pulse widths with increasing temperature for the LM124. We also observed increasing pulse amplitudes with increasing temperature for several sensitive transistors in the LM139. However the response from the input transistor was a rapidly shrinking SET, suggesting that the SET threshold increases at elevated temperatures for the input stage transistors. In addition we observed increases in the SET leading edge fall times with increasing temperature for the LM139 that are consistent with independently measured slew rates. Simulations revealed that the dominant mechanism is bipolar current gain enhancement at elevated temperatures. These temperature-induced changes to the SETs may have critical implications for radiation hardness assurance.