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Browse Journals & Magazines > Power Electronics, IEEE Trans ...> Volume:25 Issue:5 Help

The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE

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2 Author(s)
Zarebski, J. ; Dept. of Marine Electron., Gdynia Maritime Univ., Gdynia, Poland ; Gorecki, K.

In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well.

Published in:
Power Electronics, IEEE Transactions on  (Volume:25 ,  Issue: 5 )

Date of Publication: May 2010

Page(s):
1265 - 1274
ISSN :
0885-8993
INSPEC Accession Number:
11285151
Digital Object Identifier :
10.1109/TPEL.2009.2036850
Product Type:
Journals & Magazines
Date of Publication :
24 November 2009
Date of Current Version :
06 May 2010
Issue Date :
May 2010
Sponsored by :
IEEE Power Electronics Society

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