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Effects of oxygen vacancy on ferroelectricity in Ba(Fe1/2Nb1/2)O3 thin films grown by pulsed laser deposition

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3 Author(s)
Zhang, Wei ; Department of Materials Science and Engineering, Laboratory of Dielectric Materials, Zhejiang University, 38 Zheda Road, Hangzhou, China ; Li, Lei ; Chen, Xiang Ming

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Well-crystallized Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates in various oxygen pressures at 550 °C by pulsed laser deposition. X-ray diffraction analysis revealed that the thin films had a single phase of perovskite structure. The lattice constants of thin films increased obviously with decreasing the deposited oxygen pressure due to more oxygen deficiency in samples. Saturated polarization-electric-field (P-E) loops and butterfly-shaped capacitance-voltage (C-V) curves were observed in Ba(Fe1/2Nb1/2)O3 thin films at room temperature. The remnant polarization decreased with increasing the deposition oxygen pressure and was further depressed by annealing in high pressure oxygen. The oxygen vacancy played a predominant role in the ferroelectricity of Ba(Fe1/2Nb1/2)O3 thin films.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 10 )