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Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

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5 Author(s)
Herderick, Edward D. ; Department of Materials Science and Engineering, Center for Emergent Materials, The Ohio State University, Columbus, Ohio 43210, USA ; Reddy, Kongara M. ; Sample, Rachel N. ; Draskovic, Thomas I.
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Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au–NiO–Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 20 )

Date of Publication:

Nov 2009

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