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Fabrication of a transparent and flexible thin film transistor based on single-walled carbon nanotubes using the direct transfer method

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2 Author(s)
Tseng, S.H. ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan ; Tai, N.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3264970 

The fabrication of transparent and flexible thin film transistors (TFTs), using single-walled carbon nanotube (SWCNT) networks as bottom gates and conducting channels and polymethylmethacrylate (PMMA) as an insulating layer, by the direct transfer method is demonstrated. The fabricated SWCNT-TFTs exhibited a mobility of 23.4 cm2/Vs and an ON/OFF current ratio of ∼103. A minor decrease of ∼7% on the performance of the SWCNT-TFTs after bending to a radius of curvature of ∼6 mm was observed. The differences in performance of the devices fabricated with SWCNTs on SiO2/Si and those prepared by transferring SWCNTs onto a polycarbonate substrate are also discussed.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 20 )

Date of Publication:

Nov 2009

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