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A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS

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7 Author(s)

A DC-to-16.1 GHz wideband LNA in 90 nm digital CMOS is protected up to 4.5 kV HBM, equivalent 300 V CDM, and 1 kV HMM ESD stress by adding an area-efficient asymmetric T-diode with built-in local ESD protection in front of the RF input. Additional turn-off circuitry prevents any parasitic ESD path to be triggered in the core circuit.

Published in:

EOS/ESD Symposium, 2009 31st

Date of Conference:

Aug. 30 2009-Sept. 4 2009

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