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Effect of Growth Temperature on InP QD Lasers

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6 Author(s)
Smowton, P.M. ; Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK ; Al-Ghamdi, M.S. ; Shutts, S. ; Edwards, G.
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We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750??C to 690??C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710??C and 730??C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm-2 for 2-mm-long lasers with uncoated facets.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 2 )