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A Wideband Multiharmonic Empirical Large-Signal Model for High-Power GaN HEMTs With Self-Heating and Charge-Trapping Effects

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3 Author(s)
Yuk, K.S. ; Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA ; Branner, G.R. ; McQuate, D.J.

A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT) utilizing an improved drain current (Ids) formulation with self-heating and charge- trapping modifications is presented. The new drain current equation accurately models the asymmetric bell-shaped transconductance (gm) for high Ids over a large range of biases. A method of systematically employing dynamic IV behavior using pulsed-gate IV and pulsed-gate-pulsed-drain IV datasets over a wide variety of thermal and charge-trapping conditions is presented. The composite nonlinear model accurately predicts the dynamic IV behavior, S-parameters up to 10 GHz, and large-signal wideband harmonic behavior for a multitude of quiescent gate-source and drain-source biases as well as third-order intermodulation distortion (IM3).

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 12 )

Date of Publication:

Dec. 2009

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