Cart (Loading....) | Create Account
Close category search window
 

X-ray irradiation effects on the trapping properties of Cd1-xZnxTe detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Fraboni, B. ; Department of Physics, University of Bologna, viale Berti Pichat 6/2, Bologna 40127, Italy ; Pasquini, L. ; Castaldini, A. ; Cavallini, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3253748 

CdZnTe-based detectors possess unique properties as room-temperature x- and gamma-ray detectors. We report on the effects of x-ray irradiation on CdZnTe and CdTe:Cl detectors with increasing x-ray doses. We correlate the “macroscopic” performance of the detectors, investigated by gamma-ray spectroscopy to the “microscopic” effects induced by the impinging radiation, i.e., the defective states introduced in the crystal lattice. The electrical activity of the defects and their activation energy have been investigated by photo induced current transient spectroscopy and by space charge limited current analyses. We identify the x-ray dose that induces a significant degradation in the detector performance, and by cross-correlating the results obtained, we achieve a reliable estimate of the actual concentration of electrically active deep states and assess the potentiality of these experimental methods as tools for quantitative analyses of high resistivity materials.

Published in:

Journal of Applied Physics  (Volume:106 ,  Issue: 9 )

Date of Publication:

Nov 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.