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Spin-polarized tunneling in fully epitaxial magnetic tunnel diodes with a narrow-gap In1-xMnxAs electrode

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3 Author(s)
Saito, H. ; National Institute of Advanced Industrial Science and Technology (AIST), Nanoelectronics Research Institute, Umezono 1-1-1, Central 2, Tsukuba, Ibaraki 305-8568, Japan ; Yuasa, S. ; Ando, K.

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We investigated spin-dependent tunneling properties in fully epitaxial Fe/ZnSe/In1-xMnxAs with a metal/insulator/semiconductor structure. A tunneling magnetoresistance (TMR) ratio up to 14% was observed, which is the first TMR reported in tunnel junctions with a narrow-gap magnetic semiconductor electrode. This magnetic tunnel diode should be a major breakthrough in developing a Kisaki-type spin bipolar transistor.

Published in:

Applied Physics Letters  (Volume:95 ,  Issue: 19 )

Date of Publication:

Nov 2009

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