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Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma

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7 Author(s)
Kwon, Kwang-Ho ; Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea ; Efremov, Alexander ; Ham, Yong-Hyun ; Min, Nam Ki
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The investigations of etch characteristics and mechanisms for indium tin oxide (In2O3)0.9:(SnO2)0.1 (ITO) thin films using HBr/Ar inductively coupled plasma were carried out. The ITO etch rate was measured in the range of 0%–100% Ar in the HBr/Ar mixture at fixed gas pressure (6 mTorr), input power (700 W), and bias power (200 W). Plasma parameters and composition were examined with a combination of plasma diagnostics by double Langmuir probe and global (zero-dimensional) plasma model. It was found that the ITO etch rate follows the behavior of Br atom flux but contradicts with that for H atoms and positive ions. This suggests that the ITO etch process is not limited by the ion-surface interaction kinetics and appears in the reaction-rate-limited etch regime with the Br atoms as the main chemically active species.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 1 )

Date of Publication:

Jan 2010

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