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Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

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14 Author(s)
El Kurdi, M. ; Inst. d''Electron. Fondamentale, Univ. Paris-Sud 11, Orsay, France ; Ngo, T.-P. ; Checoury, X. ; Sauvage, S.
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Using a 30 band k.p formalism, we calculate the band structure and the optical gain of tensilely-strained germanium. We show that the room temperature emission of germanium-on-insulator can be significantly enhanced by n-doping of germanium.

Published in:

Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on

Date of Conference:

9-11 Sept. 2009