IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:31 Issue:1 Help

Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Jampana, B.R. ; Dept. of Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA ; Melton, A.G. ; Jamil, M. ; Faleev, N.N.
more authors

The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

Published in:
Electron Device Letters, IEEE  (Volume:31 ,  Issue: 1 )

Date of Publication: Jan. 2010

Page(s):
32 - 34
ISSN :
0741-3106
INSPEC Accession Number:
11024682
Digital Object Identifier :
10.1109/LED.2009.2034280
Product Type:
Journals & Magazines
Date of Publication :
17 November 2009
Date of Current Version :
22 December 2009
Issue Date :
Jan. 2010
Sponsored by :
IEEE Electron Devices Society

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.