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Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

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7 Author(s)
Jampana, B.R. ; Dept. of Mater. Sci. & Eng., Univ. of Delaware, Newark, DE, USA ; Melton, A.G. ; Jamil, M. ; Faleev, N.N.
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The design of coherently strained InGaN epilayers for use in InGaN p-n junction solar cells is presented in this letter. The X-ray diffraction of the epitaxially grown device structure indicates two InGaN epilayers with indium compositions of 14.8% and 16.8%, which are confirmed by photoluminescence peaks observed at 2.72 and 2.67 eV, respectively. An open-circuit voltage of 1.73 V and a short-circuit current density of 0.91 mA/cm2 are observed under concentrated AM 0 illumination from the fabricated solar cell. The photovoltaic response from the InGaN p-n junction is confirmed by using an ultraviolet filter. The solar cell performance is shown to be related to the crystalline defects in the device structure.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 1 )

Date of Publication:

Jan. 2010

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