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Fin Width (W_{\rm \f\in}) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

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5 Author(s)
Sung-Jin Choi ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Jin-Woo Han ; Moon, Dong-Il ; Jang, Moongyu
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This letter is aimed at experimentally investigating the fin width (Wfin) dependence of both a dopant-segregated Schottky-barrier (DSSB) and a conventional FinFET SONOS device with diffused p-n junctions for application of a NOR-type flash memory device. High parasitic resistance (Rpara) at the source/drain by a narrowed Wfin results in degradation of memory performance for the conventional FinFET SONOS device. In contrast, it is shown that a narrow Wfin significantly improves the memory performance for the DSSB FinFET SONOS device, resulting from an improved lateral electric field without a significant change of the Rpara value.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 1 )