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The hybrid integration of ultrathin-body partially insulated MOSFETs (UTB PiFETs) and a bulk MOSFET was investigated. With a partial silicon-on-insulator (SOI) process using a SiGe sacrificial layer, UTB PiFETs with thin buried insulation layers were realized on the same bulk Si wafer with a bulk MOSFET. A partially insulating oxide (PiOX)-under-channel PiFET is suitable from the viewpoint of high-speed operation due to its SOI-like characteristics. On the other hand, a PUSD PiFET is useful from the viewpoint of low stand-by power operation due to its low junction leakage current. Through hybrid integration, not only multiple VTH's can be obtained but also the technical difficulties of bulk MOSFETs can be alleviated. Thus, hybrid integration is a very useful process technique to implement integrated-circuit products with optimized power and performance management.