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Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature

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3 Author(s)
Iovu, M.S. ; Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova ; Vasiliev, I.A. ; Shpotyuk, O.I.

The quasi-static capacitance of As10Se90 amorphous film was studied in cycles of heating and cooling near the glass transition temperature Tg=343 K. Features in the capacitance behavior such as the non-exponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As10Se90 which is accompanied by freezing of some charged molecular dipoles.

Published in:

Semiconductor Conference, 2009. CAS 2009. International  (Volume:2 )

Date of Conference:

12-14 Oct. 2009

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