Cart (Loading....) | Create Account
Close category search window

Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Iovu, M.S. ; Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova ; Vasiliev, I.A. ; Shpotyuk, O.I.

The quasi-static capacitance of As10Se90 amorphous film was studied in cycles of heating and cooling near the glass transition temperature Tg=343 K. Features in the capacitance behavior such as the non-exponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As10Se90 which is accompanied by freezing of some charged molecular dipoles.

Published in:

Semiconductor Conference, 2009. CAS 2009. International  (Volume:2 )

Date of Conference:

12-14 Oct. 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.