Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes

By exploiting a novel analytical model of the open-circuit voltage decay (OCVD) applied to 4H-SiC pin diodes, the limitations of the OCVD method when used for carrier lifetime measurement of SiC epilayers are explored. Since the model is able to describe the transient of a generic diode when switched from arbitrary current level, it reveals a comprehensive tool to show the influence of the recombination velocity at the epilayer interfaces on the measurement method and to prove the effectiveness of the measurement technique also for very thick epilayers.