Referenced Items are not available for this document.
Single event gate rupture (SEGR) testing on a deep trench oxide capacitor used for the reduction of single event upsets (SEU) in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology indicates that SEGR was not detected.
Published in:
Radiation Effects Data Workshop, 2009 IEEE
Date of Conference: 20-24 July 2009
- Page(s):
- 71 - 75
- Print ISBN:
- 978-1-4244-5092-3
- INSPEC Accession Number:
- 10977509
- Conference Location :
- Quebec City, QC
- Digital Object Identifier :
- 10.1109/REDW.2009.5336310
- Product Type:
- Conference Publications
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