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TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission

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7 Author(s)
Oldham, T.R. ; Perot Syst. Gov. Services, Inc., Greenbelt, MD, USA ; Friendlich, M.R. ; Sanders, A.B. ; Seidleck, C.M.
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SEE and TID results are presented for two advanced commercial flash memories, Samsung and Micron 4 Gb. Both have very good TID response, and very good SEU bit error rates, but the Samsung parts have lower SEFI rates and lower rates of destructive failures.

Published in:

Radiation Effects Data Workshop, 2009 IEEE

Date of Conference:

20-24 July 2009